A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling

DOI Web Site 参考文献21件
  • TAKAYAMA Naoki
    Department of Physical Electronics, Tokyo Institute of Technology
  • MATSUSHITA Kota
    Department of Physical Electronics, Tokyo Institute of Technology
  • ITO Shogo
    Department of Physical Electronics, Tokyo Institute of Technology
  • LI Ning
    Department of Physical Electronics, Tokyo Institute of Technology
  • BUNSEN Keigo
    Department of Physical Electronics, Tokyo Institute of Technology
  • OKADA Kenichi
    Department of Physical Electronics, Tokyo Institute of Technology
  • MATSUZAWA Akira
    Department of Physical Electronics, Tokyo Institute of Technology

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This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40GHz. The extracted pad model is also shown.

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