Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

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Author(s)

    • Hayashi Shohei HAYASHI Shohei
    • Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
    • MIYAZAKI Seiichi
    • Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University

Journal

  • Applied physics express

    Applied physics express 3(6), "061401-1"-"061401-3", 2010-06-25

    Japan Society of Applied Physics

References:  19

Codes

  • NII Article ID (NAID)
    10027015042
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    18820778
  • NDL Article ID
    10730137
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  NDL 
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