Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
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- ISHIKAWA Ryo
- University of Electro-Communications
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- KIMURA Junichi
- University of Electro-Communications
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- TAKAHASHI Yukio
- University of Electro-Communications
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- HONJO Kazuhiko
- University of Electro-Communications
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Abstract
An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
Journal
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E93-C (7), 958-965, 2010
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1390001204376307072
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- NII Article ID
- 10027365136
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- NII Book ID
- AA10826283
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- ISSN
- 17451353
- 09168524
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed