EELS and <I>Ab-Initio</I> Study of Faceted CSL Boundary in Silicon

DOI Web Site Web Site 1 Citations 41 References
  • Sakaguchi Norihito
    Laboratory of Integrated Function Materials, Center for Advanced Research of Energy Conversion Materials, Faculty of Engineering, Hokkaido University
  • Miyake Makito
    Division of Materials Science and Engineering, Graduate School of Engineering, Hokkaido University
  • Watanabe Seiichi
    Laboratory of Integrated Function Materials, Center for Advanced Research of Energy Conversion Materials, Faculty of Engineering, Hokkaido University
  • Takahashi Heishichiro
    Laboratory of Integrated Function Materials, Center for Advanced Research of Energy Conversion Materials, Faculty of Engineering, Hokkaido University

Bibliographic Information

Other Title
  • EELS and ab-initio study of faceted CSL boundary in silicon

Search this article

Abstract

Faceted Σ3 CSL grain boundaries in silicon were investigated by high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS) and ab-initio calculation. A {112} Σ3 CSL boundary consisted of two segments which differed in atomic structure. The segment near the connected corner to {111} Σ3 CSL boundary showed symmetric structure and the other long segment, being distant region from the corner, showed asymmetric structure. In the symmetric segment a 5-fold coordinated atom presented, which produced a deep state in the band gap. A pronounced shoulder, which could be attributed to the defect state above Fermi level, was detected only in Si-L23 energy-loss near-edge spectra (ELNES) acquired from the symmetric segment of the {112} Σ3 CSL boundary near the CSL junction.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 52 (3), 276-279, 2011

    The Japan Institute of Metals and Materials

Citations (1)*help

See more

References(41)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top