Instantaneous and Complete Decomposition of Formaldehyde by Thermally Activated Oxide Semiconductors

• Shima Hideki

  Department of Applied Physics, Yokohama National University

• Takahashi Hiroo

  Department of Applied Physics, Yokohama National University

• Miyauchi Hiroyuki

  The Association of Industrial Health

• Mizuguchi Jin

  Department of Applied Physics, Yokohama National University

抄録

The extensive use of resin-bonded wood in construction as well as the continued expanding application of formaldehyde-based resins has resulted in formaldehyde (FA) becoming a major indoor contaminant. In this investigation, instantaneous and complete decomposition of FA has been studied by thermally activated semiconductors whose system had previously been developed by us. Complete decomposition has been achieved with Cr₂O₃ at about 500°C for FA concentrations of 100 and 1200 ppm with a residence time of about 20 ms. Our system is simple in structure and compact; nevertheless, quite efficient.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 52 (7), 1489-1491, 2011

  公益社団法人 日本金属学会

キーワード

• formaldehyde
• volatile organic compound
• thermally activated semiconductor

詳細情報

• CRID: 1390001204251967744
• NII論文ID: 10029297216
• NII論文ID: 130004454775
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.m2011062
• COI: 1:CAS:528:DC%2BC3MXhtFWqtr3J
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 11136305
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11136305
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/52/7/52_M2011062/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可