Si基板上AlGaN/GaNヘテロ構造に関する研究  [in Japanese] Study on AlGaN/GaN Heterostructures Grown on Si Substrate  [in Japanese]

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Author(s)

    • 江川 孝志 EGAWA Takashi
    • 名古屋工業大学極微デバイス機能システム研究センター Research Center for Nano-Device and System, Nagoya Institute of Technology

Abstract

  We have achieved a thick AlGaN/GaN HEMT on Si substrate using GaN/AlN multilayer. The multilayer is effective in relaxing the stress in the upper GaN layer. The vertical and horizontal breakdown voltages increased with the increase of the epitaxial layer thickness. A breakdown field of 1.8×10<sup>6</sup> V/cm was estimated from the vertical breakdown voltage. The horizontal breakdown voltage as high as 1813 V was obtained across 10 μm ohmic gap. We also reported on the influence of deep pits on breakdown of AlGaN/GaN HEMTs on Si. For devices with deep pits, the breakdown was greatly affected by large leakage through buffer and substrate. Cross-sectional transmission electron microscopy image revealed that deep pits originate from Si because of Ga etching Si substrate at thermal cleaning. The three terminal-off breakdown decreased rapidly as the increase of density of deep pits. Both thick and pit- free epitaxial layer are important for the fabrication of device with high- breakdown.<br>

Journal

  • Journal of the Vacuum Society of Japan

    Journal of the Vacuum Society of Japan 54(6), 381-385, 2011-06-20

    The Vacuum Society of Japan

References:  13

  • <no title>

    EGAWA T.

    Electron. Lett. 36, 1816, 2000

    Cited by (1)

  • <no title>

    EGAWA T.

    Jpn. J. Appl. Phys. 41, L663, 2002

    Cited by (1)

  • <no title>

    DADGAR A.

    Jpn. J. Appl. Phys. 39, L1183, 2000

    Cited by (1)

  • <no title>

    DADGAR A.

    J. Cryst. Growth 297, 279, 2006

    Cited by (1)

  • <no title>

    IWAKAMI S.

    Jpn. J. Appl. Phys. 46, L587, 2007

    Cited by (1)

  • <no title>

    UEMOTO Y.

    Technical Digest of International Electron Devices Meeting, Washington DC, 2009 165, 2009

    Cited by (1)

  • <no title>

    HOSHI S.

    Applied Physics Express 2, 061001-1, 2009

    Cited by (1)

  • <no title>

    SELVARAJ S. L.

    IEEE Electron Device Lett. 30, 587, 2009

    Cited by (1)

  • <no title>

    SELVARAJ S. L.

    Applied Physics Express 2, 111005-1, 2009

    Cited by (1)

  • <no title>

    SHEN L.

    IEEE Electron Device Lett. 22, 457, 2001

    Cited by (1)

  • <no title>

    TAN S.

    Jpn. J. Appl. Phys. 48, 111002-1, 2009

    Cited by (1)

  • <no title>

    REIHER A.

    J. Crystal Growth 248, 563, 2003

    DOI  Cited by (2)

  • <no title>

    ISHIKAWA H.

    J. Cryst. Growth 189/190, 178, 1998

    DOI  Cited by (29)

Codes

  • NII Article ID (NAID)
    10029319310
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    18822398
  • NDL Article ID
    11189164
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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