Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires

• Onuki Jin

  Department of Materials Science and Engineering, Ibaraki University

• Tamahashi Kunihiro

  Department of Materials Science and Engineering, Ibaraki University

• Namekawa Takashi

  Department of Materials Science and Engineering, Ibaraki University

• Sasajima Yasushi

  Department of Materials Science and Engineering, Ibaraki University

Abstract

Low resistivity Cu wires were developed by the combination of lessening impurities through additive-free plating and high heating rate annealing. Resistivities of Cu wires made with the new method were about 30% lower than those made by conventional plating with additives and annealing at the same temperature in H₂. Low resistivity Cu wires were realized even at temperatures 100 K lower than conventional annealing temperatures due to substantial grain growth by the high heating rate annealing in the Cu wires made with the additive-free plating.

Journal

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 52 (9), 1818-1823, 2011

  The Japan Institute of Metals and Materials

Keywords

• fine copper wire
• resistivity
• additive free plating
• high heating rate annealing
• grain boundary energy
• grain size distribution

Details

• CRID: 1390001204250295424
• NII Article ID: 10029530409
• NII Book ID: AA1151294X
• DOI: 10.2320/matertrans.m2011098
• ISSN: 13475320
• ISSN: 13459678
• NDL BIB ID: 11226198
• Web Site: http://id.ndl.go.jp/bib/11226198
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I11226198
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/52/9/52_M2011098/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed