Proton induced single event upset cross section prediction for 0.15μm six-transistor (6T) silicon-on-insulator static random access memories

この論文をさがす

著者

    • Li Lei LI Lei
    • Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China
    • Zhou Wanting ZHOU Wanting
    • Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China
    • Liu Huihua LIU Huihua
    • Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China

収録刊行物

  • Journal of nuclear science and technology

    Journal of nuclear science and technology 49(3), 450-456, 2012-04-01

    Taylor & Francis

参考文献:  22件中 1-22件 を表示

各種コード

  • NII論文ID(NAID)
    10030137603
  • NII書誌ID(NCID)
    AA00703720
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    00223131
  • NDL 記事登録ID
    023637488
  • NDL 請求記号
    Z78-A749
  • データ提供元
    CJP書誌  NDL 
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