Reaction between GaN and Metallic Deposition Films

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The interfacial microstructures of two typical contact films for gallium nitride (GaN) have been investigated by transmission electron microscopy. One is a 300-nm-thick Ni single-layer deposited on p-type GaN and then annealed at 873 K. Ni<sub>5</sub>Ga<sub>3</sub> is formed at the interface by the post-deposition anneal. As the other product of the interfacial reaction, N<sub>2</sub> voids are formed bulging to the Ni-side. The other contact film consists of four layers: Ti, Al, Ni, and Au, at the initial state. By annealing at 873 K for 300 s, the reactions proceed between GaN and Ti and also among the layers. The reaction at the GaN/Ti interface forms a thin layer of TiN adjacent to GaN. The layered structure disappears completely due to the interlayer reaction and subsequent growth of the reaction product grains.

収録刊行物

  • 溶接学会論文集 : quarterly journal of the Japan Welding Society

    溶接学会論文集 : quarterly journal of the Japan Welding Society 27(2), 204s-208s, 2010-01-20

    一般社団法人 溶接学会

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各種コード

  • NII論文ID(NAID)
    10030149189
  • NII書誌ID(NCID)
    AN1005067X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    02884771
  • データ提供元
    CJP書誌  J-STAGE 
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