Achieving a Low Interfacial Density of States with a Flat Distribution in High-κ Ga₂O₃(Gd₂O₃) Directly Deposited on Ge Achieving a Low Interfacial Density of States with a Flat Distribution in High-\kappa Ga2O3(Gd2O3) Directly Deposited on Ge

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著者

    • Chu Reilin
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Chu Lungkun
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Lin Tsungda
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Chang Yaochung
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Wang Wei-E
    • Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven, Belgium
    • Kwo J. Raynien
    • Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Hong Minghwei
    • Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan

抄録

The interfacial density of states (D_{\text{it}}) distribution of high-\kappa dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pumping (CP) technique. The conductance measurements yielded D_{\text{it}} values in the range of (1{\mbox{--}}4)\times 10^{11} cm-2 eV-1 from the mid-gap energy to the conduction band edge within the Ge band gap, which are consistent with the mean D_{\text{it}} value of {\sim}2\times 10^{11} cm-2 eV-1 near the mid-gap obtained independently by the CP method. The flat D_{\text{it}} distribution at the conduction band edge compares favorably with those attained using IPLs such as SiO2/Si-cap and GeO2.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 111101-111101-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153174
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321024
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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