Emission Pattern Control of GaN-Based Light-Emitting Diodes with ZnO Nanostructures

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著者

    • Lee Young-Seok Lee Young-Seok
    • LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea
    • Jung Yong-Il Jung Yong-Il
    • LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea
    • Noh Bum-Young [他] Noh Bum-Young
    • LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea
    • Park Il-Kyu
    • LED-IT Fusion Technology Research Center and Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749, Korea

抄録

We report a controllable way of changing the emission patterns of GaN-based blue light-emitting diodes (LEDs) using ZnO nanorods (NRs) grown hydrothermally. The shape of the ZnO NRs was controlled using seed layers for flower, askance, and vertical structures. The electrical properties of the LEDs with the ZnO NRs did not degrade, while the integrated electroluminescence intensity increased compared with that of the bare LEDs. The emission patterns of the LEDs were broadened as the inclination angle of the ZnO NRs increased. These are attributed to the ZnO NRs acting a role in scattering and guiding the light wave efficiently.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 112101-112101-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153328
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321103
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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