Photoreflectance Study of InN Films with In and N Polarities

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InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz--Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 112601-112601-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153410
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321170
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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