Large Magnetoresistance Effect in Epitaxial Co₂Fe0.4Mn0.6Si/Ag/Co₂Fe0.4Mn0.6Si Devices Large Magnetoresistance Effect in Epitaxial Co2Fe0.4Mn0.6Si/Ag/Co2Fe0.4Mn0.6Si Devices

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Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L2_{1}-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPP-GMR devices with Co2Fe0.4Mn0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 113005-113005-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153543
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321216
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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