Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

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This letter presents the dc characteristics of normally Off AlInN/AlN/GaN metal--oxide--semiconductor heterostructure field-effect transistors (MOS-HFETs). The devices were fabricated using a recessed gate and SiON dielectric layers for gate isolation. For a device with a 1.5 μm gate length and an 8-μm-long channel, the threshold voltage was above +1.5 V and a maximum drain current density of 0.7 A/mm was reached under 6 V gate bias. These enhancement-mode MOS-HFETs have an excellent potential for power electronics applications.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 114101-114101-3, 2011-11-25

    The Japan Society of Applied Physics

参考文献:  19件中 1-19件 を表示

被引用文献:  1件中 1-1件 を表示

各種コード

  • NII論文ID(NAID)
    10030153561
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321235
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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