Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

• Daniel Morgan

• Mahbuba Sultana

• Husna Fatima

Journal

• Applied physics express : APEX

  Applied physics express : APEX 4 (11), 2011-11

  Tokyo : Japan Society of Applied Physics

Details

• CRID: 1523669555786675072
• NII Article ID: 10030153561
• NII Book ID: AA12295133
• ISSN: 18820778
• NDL BIB ID: 023321235
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023321235
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles