Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

• Herwig Hahn

• Gerrit Lukens

• Nico Ketteniss

収録刊行物

• Applied physics express : APEX

  Applied physics express : APEX 4 (11), 114102-, 2011-11

  Tokyo : Japan Society of Applied Physics

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1523106605833471488
• NII論文ID: 10030153581
• NII書誌ID: AA12295133
• ISSN: 18820778
• ISSN: 18820786
• ISSN: http://id.crossref.org/issn/18820786
• DOI: 10.1143/apex.4.114102
• NDL書誌ID: 023321245
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023321245
• Web Site: http://stacks.iop.org/1882-0786/4/i=11/a=114102/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles