Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

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Enhancement-mode devices are in the centre of current research on group-III nitride transistors. The realisation of high-performance enhancement-mode transistors via gate recessing requires damage-free processing. We report on enhancement-mode AlGaN/GaN-on-Si heterostructure field-effect transistors (HFETs) fabricated with a damage-free digital etch technique. The threshold voltage (V_{\text{th}}) achieved is as high as +0.5 V. For AlGaN/GaN-on-Si HFETs, a record extrinsic transconductance (g_{\text{m}}) of 420 mS/mm and a record maximum drain current I_{\text{d,max}} of 500 mA/mm have been demonstrated. Furthermore, proper turn-off characteristics have been realised. Pulsed I--V characteristics reveal nearly no current collapse.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 114102-114102-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153581
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321245
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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