High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain High Performance Extremely Thin Body InGaAs-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors on Si Substrates with Ni--InGaAs Metal Source/Drain

この論文にアクセスする

この論文をさがす

著者

    • Kim SangHyeon Kim SangHyeon
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Iida Ryo
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Lee Sunghoon
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Nakane Ryosho
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Urabe Yuji
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Miyata Noriyuki
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Yasuda Tetsuji
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Hata Masahiko
    • Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
    • Takenaka Mitsuru
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Takagi Shinichi
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

抄録

The extremely thin body (ETB) InGaAs-on-insulator (-OI) metal--oxide--semiconductor field-effect transistors (MOSFETs) on Si substrates were demonstrated by using Ni--InGaAs alloy metal source/drain (S/D). It has been found that a light doping concentration of {\sim}10^{16} cm-3 and indium-rich InGaAs channels (In0.7Ga0.3As) provide a high mobility of 1700 cm2 V-1 s-1 even in the channel thickness of 10 nm. This is the first demonstration of ETB III--V-OI MOSFETs combined with the metal S/D technology. We have also achieved excellent I_{\text{D}}--V_{\text{G}} characteristics with an I_{\text{on}}/I_{\text{off}} ratio of over 10^{5} and low \mathit{SS} of 120 mV/dec in 5-nm-thick In0.7Ga0.3As-OI MOSFETs.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 114201-114201-3, 2011-11-25

    The Japan Society of Applied Physics

参考文献:  24件中 1-24件 を表示

  • <no title>

    TAKAGI S.

    IEEE Trans. Electron Devices 55, 21, 2008

    被引用文献1件

  • <no title>

    WU Y. Q.

    IEDM Tech. Dig., 2009 331, 2009

    被引用文献1件

  • <no title>

    RADOSAVLJEVIC M.

    IEDM Tech. Dig., 2010 126, 2010

    被引用文献1件

  • <no title>

    DEURA M.

    Proc. IEEE Int. Conf. Indium Phosphide and Related Materials, 2009 48, 2009

    被引用文献1件

  • <no title>

    KO H.

    Nature 468, 286, 2010

    被引用文献1件

  • <no title>

    YOKOYAMA M.

    Appl. Phys. Express 2, 124501, 2009

    被引用文献1件

  • <no title>

    YOKOYAMA M.

    Appl. Phys. Lett. 96, 142106, 2010

    被引用文献1件

  • <no title>

    YOKOYAMA M.

    IEDM Tech. Dig., 2010 4, 2010

    被引用文献1件

  • <no title>

    KIM S. H.

    IEDM Tech. Dig., 2010 596, 2010

    被引用文献1件

  • <no title>

    HILL R. J. W.

    Electron. Lett. 44, 498, 2008

    被引用文献1件

  • <no title>

    XUAN Y.

    IEDM Tech. Dig., 2008 371, 2008

    被引用文献1件

  • <no title>

    XUAN Y.

    IEEE Electron Device Lett. 29, 294, 2008

    被引用文献1件

  • <no title>

    SUN Y.

    IEEE Electron Device Lett. 30, 5, 2009

    被引用文献1件

  • <no title>

    LIN T. D.

    Solid-State Electron. 54, 919, 2010

    被引用文献1件

  • <no title>

    SUZUKI R.

    Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2011 941, 2011

    被引用文献1件

  • <no title>

    KUHN K. J.

    Proc. 13th Int. Workshop Computational Electronics, 2009 6, 2009

    被引用文献1件

  • <no title>

    TAKAGI S.

    Solid-State Electron. 51, 526, 2007

    被引用文献1件

  • <no title>

    HILL R. J. W.

    Electron. Lett. 44, 498, 2008

    被引用文献1件

  • <no title>

    XUAN Y.

    IEDM Tech. Dig., 2008 371, 2008

    被引用文献1件

  • <no title>

    XUAN Y.

    IEEE Electron Device Lett. 29, 294, 2008

    被引用文献1件

  • <no title>

    SUN Y.

    IEEE Electron Device Lett. 30, 5, 2009

    被引用文献1件

  • <no title>

    LIN T. D.

    Solid-State Electron. 54, 919, 2010

    被引用文献1件

  • Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs

    TSUCHIYA H.

    IEEE Electron Device Lett. 31(4), 365-367, 2010

    被引用文献10件

  • <no title>

    WIEDER H. H.

    J. Vac. Sci. Technol. B 21, 1915, 2003

    被引用文献4件

各種コード

  • NII論文ID(NAID)
    10030153611
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    10981835
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
ページトップへ