Self-Aligned Inversion-Channel In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al₂O₃/Y₂O₃ as Gate Dielectrics Self-Aligned Inversion-Channel In0.53Ga0.47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics

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著者

    • Chang Pen Chang Pen
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Huang Mao-Lin
    • Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Chang Wen-Hsin
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Wu Shao-Yun
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Wu Kang-Hua
    • Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
    • Hong Minghwei
    • Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
    • Kwo Jueinai
    • Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

抄録

In-situ ultrahigh-vacuum-deposited Y2O3 2--3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8{\mbox{--}}9)\times 10^{11} eV-1 cm-2 near the midgap has been measured using the conductance method. The strong Y2O3/InGaAs interfacial bonding, revealed using X-ray photoelectron spectroscopy, enables attainment of an atomically smooth interface with 750 °C annealing. Low subthreshold swing of 97 mV/decade, high drain current of 1.5 mA/μm, high transconductance of 0.77 mS/μm, and field-effect mobility of 2,100 cm2 V-1 s-1 were achieved in a self-aligned inversion-channel InGaAs metal--oxide--semiconductor field-effect-transistor of 1 μm gate length.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 114202-114202-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153627
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321291
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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