Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si

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著者

    • Imaizumi Kei
    • Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
    • Inomata Syuya
    • Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
    • Handa Hiroyuki
    • Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
    • Saito Eiji
    • Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
    • Enta Yoshiharu
    • Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
    • Kotsugi Masato
    • CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 107-0075, Japan
    • Ito Shun
    • Institute of Materials Research, Tohoku University, Sendai 980-8577, Japan
    • Suemitsu Maki
    • Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan

抄録

Epitaxial graphene on Si (GOS) using a heteroepitaxy of 3C-SiC/Si has attracted recent attention owing to its capability to fuse graphene with Si-based electronics. We demonstrate that the stacking, interface structure, and hence, electronic properties of GOS can be controlled by tuning the surface termination of 3C-SiC(111)/Si, with a proper choice of Si substrate and SiC growth conditions. On the Si-terminated 3C-SiC(111)/Si(111) surface, GOS is Bernal-stacked with a band splitting, while on the C-terminated 3C-SiC(111)/Si(110) surface, GOS is turbostratically stacked without a band splitting. This work enables us to precisely control the electronic properties of GOS for forthcoming devices.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 115104-115104-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153776
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321401
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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