Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

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著者

    • Wong Yuen-Yee
    • Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
    • Lin Hsiao-Yu
    • Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
    • Huang Man-Chi
    • Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
    • Nguyen Hong-Quan
    • Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
    • Lee Ching-Ting
    • Department of Electrical Engineering, National Cheng Kung University, Taiwan
    • Trinh Hai-Dang
    • Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

抄録

High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 μm thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 μm thick with a dislocation density of 6\times 10^{7} cm-2 and X-ray (\omega--2\theta) FWHM better than 130 arcsec.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 115501-115501-3, 2011-11-25

    The Japan Society of Applied Physics

参考文献:  15件中 1-15件 を表示

  • <no title>

    NAKAMURA S.

    Appl. Phys. Lett. 72, 211, 1998

    被引用文献1件

  • <no title>

    STEVENS K. S.

    Appl. Phys. Lett. 66, 3518, 1995

    被引用文献1件

  • <no title>

    VOS A. D.

    Endoreversible Thermodynamics of Solar Energy Conversion 90, 1992

    被引用文献1件

  • <no title>

    PARK I. K.

    Phys. Status Solidi C 2, 2887, 2005

    被引用文献1件

  • <no title>

    LEE K. J.

    Appl. Phys. Lett. 85, 1502, 2004

    被引用文献1件

  • <no title>

    HONDA Y.

    Appl. Phys. Lett. 80, 222, 2002

    被引用文献1件

  • <no title>

    LIN K.-L.

    Appl. Phys. Lett. 91, 222111, 2007

    被引用文献1件

  • <no title>

    BOWEN D. K.

    High Resolution X-ray Diffractometry and Topography 50, 1998

    被引用文献1件

  • <no title>

    EBEL R.

    J. Cryst. Growth 201-202, 433, 1999

    被引用文献1件

  • <no title>

    DAHAL R.

    Appl. Phys. Lett. 94, 063505, 2009

    被引用文献1件

  • <no title>

    GARTNER M.

    Appl. Surf. Sci. 253, 254, 2006

    被引用文献1件

  • <no title>

    KRAUS A.

    J. Cryst. Growth 323, 72, 2011

    被引用文献1件

  • <no title>

    GOKARNA A.

    Appl. Phys. Lett. 96, 191909, 2010

    被引用文献1件

  • <no title>

    HO I.-h.

    Appl. Phys. Lett. 69, 2701, 1996

    DOI 被引用文献10件

  • <no title>

    TABATA A.

    Appl. Phys. Lett. 80, 769, 2002

    被引用文献2件

各種コード

  • NII論文ID(NAID)
    10030153829
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321421
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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