Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-k/Metal Gate Stack by Atom Probe Tomography

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抄録

Laser-assisted atom probe tomography (APT) was successfully applied to analyze the elemental distributions in a high-k/metal gate stack of a commercially available 45 nm node real device. APT revealed the multilayer structure of the high-k/metal gate stack with nearly atomic-scale resolution, and successfully detected small amounts of Zr in the thin layer of high-k HfO2 dielectrics and H in the Ti layer of the metal gate. The present results demonstrate the usefulness of APT as a tool of elemental analysis in nanoscale multilayer device structures.

収録刊行物

  • Applied physics express

    Applied physics express 4(11), 116601-116601-3, 2011-11-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030153961
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023321484
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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