Novel Solution Process for High-Mobility C60 Fullerene Field-Effect Transistors

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Solution-processed C60 fullerene field-effect transistors with high electron mobility were demonstrated by using a novel drying process. Highly uniform and flat C60 layers were prepared from a C60 solution when the solution was rapidly dried in a vacuum chamber. Field-effect transistors with solution-deposited C60 active layers showed electron mobility of up to 0.86 cm2 V-1 s-1, threshold voltage of 3 V, subthreshold slope of 0.67 V/decade, and a current on/off ratio of 4\times 10^{6}. The mobilities of solution-deposited C60 transistors were comparable to those of vacuum-deposited C60 transistors.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 121602-121602-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154050
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385688
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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