Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells

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著者

    • Wen Yu Wen Yu
    • Research Center for Advanced Science and Technology, University of Tokyo, Meguro, Tokyo 153-8904, Japan
    • Sugiyama Masakazu
    • Department of Electrical Engineering and Information Systems, School of Engineering, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Nakano Yoshiaki
    • Research Center for Advanced Science and Technology, University of Tokyo, Meguro, Tokyo 153-8904, Japan

抄録

In order to develop a high-quality material that is lattice-matched to GaAs for III--V tandem solar cells, we introduce In0.16Ga0.84As/GaAs/GaAs0.79P0.21 strain-compensated multiple stepped quantum well (SC-MSQW). To maximize the contribution of the quantum well to the spectral response, we inserted a GaAs step layer between well and barrier. This leads to a stronger photoabsorption by the wells and enhanced carrier transport in the stacked wells. A short-circuit current density of 19.29 mA/cm2 was obtained under AM1.5G illumination, which is approximately 14% higher than that of a conventional quantum well solar cell.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 122301-122301-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154121
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385701
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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