Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

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In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved when introducing an AlGaN back barrier while significantly reducing the sub-threshold drain leakage current and enhancing the RF performance by the reduction of short-channel effects. Therefore, the AlN/GaN/AlGaN double heterostructure enables high-aspect-ratio devices generating extremely high current density, low leakage current, and high voltage operation.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 124101-124101-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154158
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    18820778
  • NDL 記事登録ID
    023385725
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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