Fabrication of GaNAs/AlGaAs Heterostructures with Large Band Offset Using Periodic Growth Interruption

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著者

    • Jo Masafumi Jo Masafumi
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
    • Elborg Martin
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
    • Sugimoto Yoshimasa
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
    • Noda Takeshi
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
    • Sakuma Yoshiki
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
    • Sakoda Kazuaki
    • Photonic Materials Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

抄録

We studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces. The GaNAs island structures exhibit narrow photoluminescence emission at around 1 μm at low temperature, indicating the formation of a large band offset between GaNAs and AlGaAs.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 125001-125001-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154177
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385730
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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