Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al₂O₃ on Chemically Treated InP Surfaces Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces

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著者

    • Dong Hong Dong Hong
    • Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, U.S.A.
    • Kim Jiyoung
    • Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, U.S.A.
    • Wallace Robert M.
    • Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, U.S.A.

抄録

The interfacial reactions between atomic layer deposited Al2O3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process. With the first cycle of trimethyl aluminum, a significant decrease in the amount of indium oxides present on the surface is seen, consistent with the ``clean up'' effect reported for other III--V semiconductor surfaces. However, a concurrent increase in the amount of phosphorous oxide is seen, suggesting oxygen transfer from indium oxides to phosphorous during indium oxide decomposition.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 125701-125701-3, 2011-12-25

    The Japan Society of Applied Physics

参考文献:  26件中 1-26件 を表示

  • <no title>

    DEL ALAMO J. A.

    Int. Symp. VLSI Technology, Systems, and Applications 2010 166, 2010

    被引用文献1件

  • <no title>

    PASSLACK M.

    Int. Symp. VLSI Technology, Systems, and Applications 2010 155, 2010

    被引用文献1件

  • <no title>

    KWO J.

    J. Cryst. Growth. 311, 1944, 2009

    被引用文献1件

  • <no title>

    SONNET A. M.

    Microelectron. Eng. 88, 1083, 2011

    被引用文献1件

  • <no title>

    HINKLE C. L.

    Appl. Phys. Lett. 94, 162101, 2009

    被引用文献1件

  • <no title>

    MONAGHAN S.

    J. Vac. Sci. Technol. B 29, 01A807, 2011

    被引用文献1件

  • <no title>

    OHYAMA H.

    Jpn. J. Appl. Phys. 26, 1615, 1987

    被引用文献1件

  • <no title>

    WANG Y.

    ECS Trans 33(3), 487, 2010

    被引用文献1件

  • <no title>

    RADOSAVLJEVIC M.

    IEDM Tech. Dig., 2009 4, 2009

    被引用文献1件

  • <no title>

    HWANG E.

    Solid-State Electron 62, 82, 2011

    被引用文献1件

  • <no title>

    GONG X.

    Electrochem. Solid-State Lett 14, H117, 2011

    被引用文献1件

  • <no title>

    HINKLE C. L.

    Appl. Phys. Lett. 92, 071901, 2008

    被引用文献1件

  • <no title>

    BRENNAN B

    Electrochem. Solid-State Lett. 12, H205, 2009

    被引用文献1件

  • <no title>

    GRANADOS-ALPIZAR B

    Surf. Sci. 605, 1243, 2011

    被引用文献1件

  • <no title>

    SUN Y.

    J. Vac. Sri. Technol. A 21, 219, 2003

    被引用文献1件

  • <no title>

    BRENNAN B

    Appl. Surf. Sci. 257, 4082, 2011

    被引用文献1件

  • <no title>

    O'CONNOR E.

    J. Appl. Phys. 109, 024101, 2011

    被引用文献1件

  • <no title>

    WALLACE R. M.

    ECS Trans 16(5), 255, 2008

    被引用文献1件

  • <no title>

    KIKUCHI D.

    Mater. Sci. Eng. B 76, 133, 2000

    被引用文献1件

  • <no title>

    CASEY P.

    Appl. Surf. Sci. 256, 7530, 2010

    被引用文献1件

  • <no title>

    FUKUDA Y.

    Surf. Interface Anal. 24, 578, 1996

    被引用文献1件

  • <no title>

    O'REILLY E. P.

    Phys. Rev. B 34, 8684, 1986

    被引用文献1件

  • <no title>

    KOMSA H.-P.

    Microelectron. Eng. 88, 1436, 2011

    被引用文献1件

  • <no title>

    CHENG X.

    Appl. Phys. Lett. 96, 022904, 2010

    被引用文献1件

  • <no title>

    MILOJEVIC M.

    Appl. Phys. Lett. 93, 202902, 2008

    被引用文献1件

  • <no title>

    HOLLINGER G.

    J. Vac. Sci. Technol. A 3, 2082, 1985

    被引用文献2件

各種コード

  • NII論文ID(NAID)
    10030154264
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385761
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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