Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer

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Surface treatment of the GaSb cap layer is investigated for the gate operation of InAs/AlGaSb heterostructures with an Al2O3 insulating layer grown by atomic layer deposition. We show that dilute HCl treatment for only 10 s effectively removes the electron trap states at the GaSb/Al2O3 interface and greatly improves the gate operation. In contrast, HCl treatment followed by water rinse results in adverse effects. Using an equivalent circuit model, we deduce the interface trap state density for the no-treatment case to be D_{\text{it}}\sim 10^{13} cm-2\cdoteV-1, which is reduced to well below 10^{12} cm-2\cdoteV-1 by the HCl treatment. Our data also show that deep donor states in the AlGaSb barrier impede the gate operation and cause gate hysteresis.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 125702-125702-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154291
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385767
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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