Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer
Search this article
Journal
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- Applied physics express : APEX
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Applied physics express : APEX 4 (12), 125702-, 2011-12
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1521136280437955584
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- NII Article ID
- 10030154291
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
- 18820786
- http://id.crossref.org/issn/18820786
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- NDL BIB ID
- 023385767
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- Crossref
- CiNii Articles