Wavelength Dependence of Lithography Resolution in Extreme Ultraviolet Region

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Post-13.5 nm extreme ultraviolet (EUV) lithography has recently attracted much attention. To improve lithography resolution, reducing the wavelength has been an established procedure. In this study, the dependence of lithography resolution on the wavelength of the exposure tool was investigated in the wavelength range from 2 to 13.5 nm. The resolution initially decreased with decreasing wavelength and then increased because of the resolution blur caused by secondary electrons. The resolution is expected to be highest at a wavelength of 3--5 nm, depending on the quality of the exposure optics.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 126501-126501-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154367
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385795
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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