Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes

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Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (10\bar{1}\bar{1}) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (10\bar{1}\bar{1}) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the substrate. A (10\bar{1}\bar{1}) light-emitting diode using an epitaxial ZnO film as a transparent current-spreading layer achieved a high external quantum efficiency of 48%.

収録刊行物

  • Applied physics express

    Applied physics express 4(12), 126502-126502-3, 2011-12-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154398
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385801
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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