Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

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One of the most promising methods of obtaining nonpolar GaN substrates is regrowth of thick GaN crystals using hydride vapor phase epitaxy (HVPE). The multistep growth was performed along the c polar direction. After HVPE depositions, the crystal was sliced along (11\bar{2}0) nonpolar planes. On such samples, we performed structural high-resolution X-ray characterization. The full width at half maximum of the X-ray rocking curves for the 11\bar{2}0 reflection achieved 27 arcsec. The interfaces between each regrowth step were clearly visible in cathodoluminescence (CL), due to different concentrations of residual dopants before and after a regrowth step.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 011001-011001-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154451
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385841
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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