AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility

• Kai Cheng

• Hu Liang

• Marleen Van Hove

Journal

• Applied physics express : APEX

  Applied physics express : APEX 5 (1), 2012-01

  Tokyo : Japan Society of Applied Physics

Details

• CRID: 1522262179599526528
• NII Article ID: 10030154463
• NII Book ID: AA12295133
• ISSN: 18820778
• NDL BIB ID: 023385851
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023385851
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles