High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering High-Mobility Thin-Film Transistors with Polycrystalline In--Ga--O Channel Fabricated by DC Magnetron Sputtering

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著者

    • Iitsuka Takashi
    • Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
    • Matsuzaki Shigeo
    • Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
    • Yano Koki
    • Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan

抄録

Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In--Ga--O (IGO) thin film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick IGO TFT showed a field-effect mobility of 39.1 cm2 V-1 s-1, a threshold voltage of 1.4 V, and a subthreshold gate voltage swing of 0.12 V/decade. The polycrystalline IGO thin film showed the cubic bixbyite structure of In2O3 without an obvious preferred orientation. The average grain size of polycrystalline IGO was approximately 10 μm. The high mobility of IGO TFT is related to the In2O3 crystalline phase and large grain size of the IGO film.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 011102-011102-3, 2012-01-25

    The Japan Society of Applied Physics

参考文献:  17件中 1-17件 を表示

  • <no title>

    NOMURA K.

    Nature 432, 488, 2004

    被引用文献1件

  • <no title>

    GORRN P.

    Appl. Phys. Lett. 90, 063502, 2007

    被引用文献1件

  • <no title>

    RYU M. K.

    Appl. Phys. Lett. 95, 072104, 2009

    被引用文献1件

  • <no title>

    ARAI T.

    SID Int. Symp. Dig. Tech. Pap., 2010 41, 1033, 2010

    被引用文献1件

  • <no title>

    FUKUMOTO E.

    Proc. IDW'10 631, 2010

    被引用文献1件

  • <no title>

    KAWAZOE H.

    J. Appl. Phys. 76, 7935, 1994

    被引用文献1件

  • <no title>

    WEIHER R. L.

    J. Appl. Phys. 37, 299, 1966

    被引用文献1件

  • <no title>

    WEIHER R. L.

    J. Appl. Phys. 33, 2834, 1962

    被引用文献1件

  • <no title>

    WANG L.

    Appl. Phys. Lett. 87, 161107, 2005

    被引用文献1件

  • <no title>

    NOH J. H.

    IEEE Electron Device Lett. 31, 567, 2010

    被引用文献1件

  • <no title>

    ZHANG H. Z.

    Solid-State Electron. 54, 479, 2010

    被引用文献1件

  • <no title>

    PARK J. H.

    Jpn. J. Appl. Phys. 50, 080202, 2011

    被引用文献1件

  • <no title>

    SHIGESATO Y.

    Thin Solid Films 238, 44, 1994

    被引用文献1件

  • <no title>

    NAKATA M.

    Jpn. J. Appl. Phys. 48, 081608, 2009

    被引用文献1件

  • <no title>

    FURUTA M.

    Jpn. J. Appl. Phys. 50, 03CB09, 2011

    被引用文献1件

  • <no title>

    UTSUNO F.

    Thin Solid Films 496, 95, 2006

    被引用文献1件

  • Modeling and simulation of polycrystalline ZnO thin-film transistors

    HOSSAIN F. M.

    J. Appl. Phys. 94(12), 7768-7777, 2003

    被引用文献7件

各種コード

  • NII論文ID(NAID)
    10030154520
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385867
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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