High Crystallinity CuScO₂ Delafossite Films Exhibiting Ultraviolet Photoluminescence Grown by Vapor–Liquid–Solid Tri-phase Epitaxy High Crystallinity CuScO2 Delafossite Films Exhibiting Ultraviolet Photoluminescence Grown by Vapor--Liquid--Solid Tri-phase Epitaxy

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著者

    • Matsubara Yuya Matsubara Yuya
    • Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Makino Takayuki Makino Takayuki
    • Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute (ASI), Wako, Saitama 351-0198, Japan
    • Chen Chunlin
    • WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
    • Tsukimoto Susumu
    • WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
    • Ueno Kazunori
    • Department of Basic Science, University of Tokyo, Meguro, Tokyo 153-8902, Japan
    • Kozuka Yusuke
    • Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Ikuhara Yuichi
    • WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
    • Kawasaki Masashi
    • Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

抄録

We have grown direct wide-bandgap CuScO2 thin films on MgAl2O4(111) substrates by tri-phase epitaxy employing molten Bi--O flux on the growth surface. The full width at half maximum of (0006) rocking curve is as narrow as 0.005 degrees, an order of magnitude narrower than those grown by conventional pulsed laser deposition (PLD). Transmission electron microscopy confirms the scarcity of defect structures or precipitates, which are of high density in PLD films. The films exhibit sharp near-bandedge photoluminescence at 3.3 eV, which is absent in PLD films.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 011201-011201-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154569
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385886
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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