Threshold Current Density Reduction by Utilizing High-Al-Composition Barriers in 3.7 THz GaAs/AlxGa1-xAs Quantum Cascade Lasers

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The temperature dependence of threshold current density (J_{\text{th}}) for GaAs/AlxGa1-xAs terahertz quantum cascade lasers (THz-QCLs) with different Al barrier compositions is studied. We achieved a maximum operation temperature (T_{\text{max}}) of 143 K for a 3.7 THz QCL by employing a longitudinal-optical (LO) phonon depopulation scheme. High-Al-composition barriers are used for increasing averaged LO-phonon energy. A significant reduction in J_{\text{th}} of approximately 30% was obtained by increasing the Al composition from 15 to 35%, when we used the same energy separation of the depopulation stats (E_{21}). T_{\text{max}} could be increased by using high-Al-composition structures due to the reduction of thermally-activated LO-phonon scattering.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 012101-012101-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154628
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023385911
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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