Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

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著者

    • Rigutti Lorenzo
    • Institut d'Electronique Fondamentale UMR CNRS 8622, University Paris Sud 11, 91405 Orsay Cedex, France
    • Julien Fran\{c}ois H.
    • Institut d'Electronique Fondamentale UMR CNRS 8622, University Paris Sud 11, 91405 Orsay Cedex, France
    • Zagonel Luiz F.
    • Laboratoire de Physique des Solides, UMR CNRS 8502, University Paris Sud 11, 91405 Orsay Cedex, France
    • Kociak Mathieu
    • Laboratoire de Physique des Solides, UMR CNRS 8502, University Paris Sud 11, 91405 Orsay Cedex, France
    • Durand Christophe
    • Equipe mixte ``Nanophysique et semiconducteurs'', CEA/CNRS/Université Joseph Fourier, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    • Salomon Damien
    • Equipe mixte ``Nanophysique et semiconducteurs'', CEA/CNRS/Université Joseph Fourier, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    • Chen Xiao Jun
    • Equipe mixte ``Nanophysique et semiconducteurs'', CEA/CNRS/Université Joseph Fourier, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    • Eymery Joël
    • Equipe mixte ``Nanophysique et semiconducteurs'', CEA/CNRS/Université Joseph Fourier, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
    • Tchernycheva Maria
    • Institut d'Electronique Fondamentale UMR CNRS 8622, University Paris Sud 11, 91405 Orsay Cedex, France

抄録

Single-wire light-emitting diodes based on radial p--i--n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst-free metal organic vapor phase epitaxy. The InxGa1-xN/GaN undoped QW system is coated over both the nonpolar lateral sidewalls and on the polar upper surface. Cathodo- and electroluminescence (EL) experiments provide evidence that the polar QWs emit in the visible spectral range at systematically lower energy than the nonpolar QWs. The EL of the polar or nonpolar QWs can be selectively activated by varying the sample temperature and current injection level.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 014101-014101-3, 2012-01-25

    The Japan Society of Applied Physics

参考文献:  13件中 1-13件 を表示

  • <no title>

    KIKUCHI A.

    Jpn. J. Appl. Phys. 43, L1524, 2004

    被引用文献1件

  • <no title>

    KIM H. M.

    Nano Lett. 4, 1059, 2004

    被引用文献1件

  • <no title>

    QIAN F.

    Nano Lett. 5, 2287, 2005

    被引用文献1件

  • <no title>

    HONG Y. J.

    Adv. Mater. 23, 3284, 2011

    被引用文献1件

  • <no title>

    BAVENCOVE A.-L.

    Electron. Lett. 47, 765, 2011

    被引用文献1件

  • <no title>

    KOESTER R.

    Nano Lett. 11, 4839, 2011

    被引用文献1件

  • <no title>

    KOESTER R.

    Nanotechnology 21, 015602, 2010

    被引用文献1件

  • <no title>

    CHEN X. J.

    Appl. Phys. Lett. 97, 151909, 2010

    被引用文献1件

  • <no title>

    DE LUNA BUGALLO A.

    Appl. Phys. Lett. 98, 233107, 2011

    被引用文献1件

  • <no title>

    ZAGONEL L. F.

    Nano Lett. 11, 568, 2011

    被引用文献1件

  • <no title>

    RESHCHIKOV M. A.

    J. Appl. Phys. 97, 061301, 2005

    被引用文献1件

  • <no title>

    QIAN F.

    Nat. Mater. 7, 701, 2008

    被引用文献1件

  • <no title>

    ZHU D.

    Appl. Phys. Lett. 94, 081113, 2009

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10030154881
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387588
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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