Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

• SangHyeon Kim

• Masafumi Yokoyama

• Noriyuki Taoka

収録刊行物

• Applied physics express : APEX

  Applied physics express : APEX 5 (1), 2012-01

  Tokyo : Japan Society of Applied Physics

詳細情報

• CRID: 1521699230371665408
• NII論文ID: 10030154895
• NII書誌ID: AA12295133
• ISSN: 18820778
• NDL書誌ID: 023387594
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I023387594
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles