Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors on Si Substrates by Metal--Oxide--Semiconductor Interface Buffer Layers

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著者

    • Kim SangHyeon Kim SangHyeon
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Iida Ryo
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Lee Sunghoon
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Nakane Ryosho
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Urabe Yuji
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Miyata Noriyuki
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Yasuda Tetsuji
    • National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
    • Hata Masahiko
    • Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
    • Takenaka Mitsuru
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • Takagi Shinichi
    • Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

抄録

The electron mobility enhancement of extremely thin body In0.7Ga0.3As-on-insulator (-OI) metal--oxide--semiconductor field-effect transistors (MOSFETs) on Si substrates by using In0.3Ga0.7As MOS interface buffer layers was demonstrated. The MOSFETs with the InGaAs thickness of 2/5/3 nm have exhibited the electron mobility of 2810 cm2 V-1 s-1 with an enhancement factor of 4.2 against that of Si MOSFET. We have examined the body thickness (T_{\text{body}}) dependence of the electron mobility. It was found that a channel thickness fluctuation scattering mechanism strongly affects the mobility in T_{\text{body}} of around 10 nm and thinner. The formation of a uniform and flat InGaAs-OI wafer is required for further improvements.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 014201-014201-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154895
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387594
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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