High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

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著者

    • Wang Xinqiang Wang Xinqiang
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Liu Shitao Liu Shitao
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Ma Nan [他] Ma Nan
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Feng Li
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Chen Guang
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Xu Fujun
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Tang Ning
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
    • Huang Sen
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
    • Chen Kevin J.
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
    • Zhou Shengqiang
    • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01314 Dresden, Germany
    • Shen Bo
    • State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

抄録

A boundary-temperature-controlled epitaxy, where the growth temperature of InN is controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire substrates by molecular beam epitaxy. The Hall-effect measurement shows a recorded electron mobility of 3280 cm2 V-1 s-1 and a residual electron concentration of 1.47\times 10^{17} cm-3 at room temperature. The enhanced electron mobility and reduced residual electron concentration are mainly due to the reduction of threading dislocation density. The obtained Hall mobilities are in good agreement with the theoretical modelling by the ensemble Monte Carlo simulation.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 015502-015502-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030154974
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387612
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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