Formation of Tensilely Strained Germanium-on-Insulator

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著者

    • Hoshi Yusuke Hoshi Yusuke
    • Research Center for Silicon Nano-Science, Advanced Research Laboratory, Tokyo City University, Setagaya, Tokyo 158-0082, Japan
    • Miyao Masanobu
    • Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
    • Shiraki Yasuhiro
    • Research Center for Silicon Nano-Science, Advanced Research Laboratory, Tokyo City University, Setagaya, Tokyo 158-0082, Japan

抄録

We fabricate a high-quality germanium-on-insulator (GOI) with tensile strain by combining the wafer bonding of a strained Ge grown on a Si substrate and an oxidized Si substrate and the selective etching of Si. The obtained 300-nm-thick strained GOI shows a smooth surface with RMS roughness of 0.15 nm and no dislocation is detected by cross-sectional transmission electron microscopy (XTEM). The tensile strain of 0.19% induced in the GOI is found to be maintained throughout the fabrication process. This suggests that the fabricated strained GOI has a high potential as an essential platform for high-performance electronic and optical devices.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 015701-015701-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155011
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387621
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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