Selective Emitter Formation by Laser Doping for Phosphorous-Doped n-Type Silicon Solar Cells

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著者

    • Hirata Kenji Hirata Kenji
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Sugimura Emi
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Fuyuki Takashi
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan

抄録

Selective emitter formation for crystalline silicon (c-Si) solar cells is very important to increase conversion efficiency. Laser doping (LD) is a very simple method for selective emitter formation because the use of masks and photolithography is unnecessary. In this paper, we report an application of LD to form a selective emitter in n-type c-Si solar cells. Our results demonstrated that the doping profile of the selective emitter showed a high doping concentration and deep doping depth. The conversion efficiency of solar cells with selective emitter formed by LD was increased. In particular, the short-circuit current density was considerably increased.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 016501-016501-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155031
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387626
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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