Microwave Atomic Force Microscopy: Quantitative Measurement and Characterization of Electrical Properties on the Nanometer Scale

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著者

    • Zhang Lan Zhang Lan
    • Department of Mechanical Science and Engineering, Nagoya University, Nagoya 464-8603, Japan
    • Ju Yang Ju Yang
    • Department of Mechanical Science and Engineering, Nagoya University, Nagoya 464-8603, Japan
    • Fujimoto Akifumi
    • Department of Mechanical Science and Engineering, Nagoya University, Nagoya 464-8603, Japan

抄録

In this paper, we report a noncontact and quantitative method of evaluating and characterizing electrical properties with a nanometer-scale spatial resolution. Microwave atomic force microscopy (M-AFM) can be used to obtain the topography and microwave image of materials in one scanning process simultaneously. Under the frequency modulation (FM) AFM mode, we successfully applied M-AFM to create a microwave image of a Au nanowire with a spatial resolution of 170 nm. Moreover, based on the analytical and explicit expressions proposed, M-AFM can implement the quantitative evaluation and characterization of the local conductivity of materials on the nanometer scale.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 016602-016602-3, 2012-01-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155072
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387631
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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