Real-Time Monitoring of Potassium Ion Release Due to Apoptosis with Cell-Based Transparent-Gate Transistor

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We monitored programmed cell death (apoptosis) in a real-time, direct and noninvasive manner using a cell-based transparent-gate transistor (TGT). Indium--tin-oxide (ITO) was utilized as a gate material, because cultured cells could be easily observed by microscopy due to its transparency. After induction of apoptosis on the cell-based TGT, the change of threshold voltage decreased gradually, which resulted from potassium ion release caused by apoptosis. The morphological change of apoptotic cells was simultaneously observed by the inverted microscopy. The platform based on the cell-based TGT is suitable for a simultaneous analysis system to realize subjective and objective evaluation of cell activities.

収録刊行物

  • Applied physics express

    Applied physics express 5(1), 017001-017001-3, 2012-01-25

    The Japan Society of Applied Physics

参考文献:  13件中 1-13件 を表示

被引用文献:  1件中 1-1件 を表示

  • 半導体原理を融合したQCM-Dの新展開

    坂田 利弥 , 福田 竜司

    電気学会研究会資料. BMS, バイオ・マイクロシステム研究会 = The papers of Technical Meeting on Bio Micro Systems, IEE Japan 2012(1), 29-32, 2012-03-14

    参考文献15件

各種コード

  • NII論文ID(NAID)
    10030155097
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023387636
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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