Lateral Control of Indium Content and Wavelength of Ⅲ–Nitride Diode Lasers by Means of GaN Substrate Patterning Lateral Control of Indium Content and Wavelength of III--Nitride Diode Lasers by Means of GaN Substrate Patterning

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A patterned GaN/sapphire template with separate regions angled between 0.4 and 2° to the wurtzite c-plane was used to grow a 50 nm In0.1Ga0.9N layer. The photoluminescence wavelength varied between 403 and 389 nm according to the increased region's angle. The indium content measured using X-rays was reduced in regions with a higher miscut angle. Patterned freestanding GaN with separate regions angled by 0.35 and 0.85° to the c-plane was used to fabricate ridge-waveguide diode lasers. Each laser stripe was placed inside one of the angled regions. Lasing wavelengths of 405.8\pm 0.2 and 401.0\pm 1 nm were obtained for devices grown in those regions.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021001-021001-3, 2012-02-25

    The Japan Society of Applied Physics

参考文献:  21件中 1-21件 を表示

  • <no title>

    NAKAMURA S. ed.

    Introduction to Nitride Semiconductor Blue Lasers and Light-Emitting Diodes, 2000

    被引用文献1件

  • <no title>

    FREITAS J. A. Jr.

    J. Phys. D 43, 073001, 2010

    被引用文献1件

  • <no title>

    HUANG X. R.

    Appl. Phys. Lett. 86, 211906, 2005

    被引用文献1件

  • <no title>

    LUA D.

    J. Cryst. Growth 272, 353, 2004

    被引用文献1件

  • <no title>

    NAKAMURA A.

    Phys. Status Solidi C 5, 2007, 2008

    被引用文献1件

  • <no title>

    TACHIBANA K.

    Phys. Status Solidi C 5, 2158, 2008

    被引用文献1件

  • <no title>

    KELLER S.

    J. Appl. Phys. 104, 093510, 2008

    被引用文献1件

  • <no title>

    KRYSKO M.

    Appl. Phys. Lett. 91, 211904, 2007

    被引用文献1件

  • <no title>

    PERLIN P.

    Phys. Status Solidi A 206, 1130, 2009

    被引用文献1件

  • <no title>

    FRANSSEN G.

    Phys. Status Solidi C 5, 1485, 2008

    被引用文献1件

  • <no title>

    LESZCZYNSKI M.

    J. Cryst. Growth 318, 496, 2011

    被引用文献1件

  • <no title>

    SUSKI T.

    Appl. Phys. Lett. 93, 172117, 2008

    被引用文献1件

  • <no title>

    SUSKI T.

    J. Appl. Phys. 108, 023516, 2010

    被引用文献1件

  • <no title>

    KRYSKO M.

    Phys. Status Solidi : Rapid Res. Lett. 4, 142, 2010

    被引用文献1件

  • <no title>

    DOMAGALA J. Z.

    Acta Phys. Pol. A 114, 1101, 2008

    被引用文献1件

  • <no title>

    BOCKOWSKI M.

    Sci. China, Ser. E 54, 42, 2011

    被引用文献1件

  • <no title>

    WANG T.

    J. Cryst. Growth 273, 48, 2004

    被引用文献1件

  • <no title>

    KURODA T.

    J. Appl. Phys. 92, 3071, 2002

    被引用文献1件

  • <no title>

    WANG C.

    Opt. Lett. 20, 1071, 1995

    被引用文献1件

  • <no title>

    DE GROOT P.

    Appl. Opt. 30, 4026, 1991

    被引用文献1件

  • <no title>

    HOFFMANN S.

    Laser Photonics Rev. 1, 44, 2007

    被引用文献1件

各種コード

  • NII論文ID(NAID)
    10030155111
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454236
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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