Role of Adsorbed H₂O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors Role of Adsorbed H2O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

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We investigated the variation of electrical performances of solution-processed zinc tin oxide thin-film transistors (ZTO TFTs) when their channel layer was exposed to ambient gases at room temperature. During our research, we observed that adsorption of H2O on the backchannel surface can act as an electron trap and/or donor, depending on the amount of H2O. In addition, we found that the abnormal behavior seen in the TFTs was caused by different rates of adsorption/desorption. Finally, the instability in the electrical characteristics of the ZTO TFTs caused by the ambient atmosphere can easily be reversed by vacuum seasoning.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021101-021101-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155133
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454269
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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