Effects of Thermal Treatments on the Trapping Properties of HfO₂ Films for Charge Trap Memories Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories

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The charge trapping properties of HfO2 thin films for application in charge trap memories are investigated as a function of high-temperature postdeposition annealing (PDA) and oxide thickness in the TaN/Al2O3/HfO2/SiO2/Si structure. The trap density (N_{\text{T}}) in HfO2, extracted by simulating the programming transient, is in the 10^{19}--10^{20} cm-3 range, and it is related to film thickness and PDA temperature. Diffusion phenomena in the stack play a significant role in modifying N_{\text{T}} in HfO2 and the insulating properties of the Al2O3 layer. The memory performances for 1030 °C PDA are promising with respect to standard stacks featuring Si3N4.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021102-021102-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155154
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454271
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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