Electrical Properties of Ultrathin SiO₂ Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition Electrical Properties of Ultrathin SiO2 Layer Deposited at 50 °C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

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We found a strong correlation between the layer porosity and electrical properties of a SiO2 layer deposited by inductively coupled plasma chemical vapor deposition. At 50 °C the SiO2 layers have a double structure: a dense layer in contact with the substrate and a porous layer on top of it. The critical thickness at which voids appear depends on the deposition rate. Breakdown voltage and charge trapping performances of SiO2 layers are very good if the thickness is below the critical value and deteriorate significantly in thicker, porous, layers. Layer porosity is absent when the sample is deposited at 250 °C.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021103-021103-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155171
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454278
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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