Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO₂ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal--Oxide--Semiconductor Capacitors

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著者

    • Chang Chia-Hua
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
    • Kakushima Kuniyuki
    • Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, Yokohama 226-8502, Japan
    • Iwai Hiroshi
    • Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, Yokohama 226-8502, Japan
    • Kawanago Takamasa
    • Interdisciplinary Graduate School of Science and Technology, Tokyo Institute of Technology, Yokohama 226-8502, Japan
    • Lin Yan-Gu
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
    • Chen Chi-Ming
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
    • Wong Yuen-Yee
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
    • Huang Guan-Ning
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.
    • Hudait Mantu
    • Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, U.S.A.
    • Chang Edward Yi
    • Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, R.O.C.

抄録

The electrical characteristics of molecular-beam-deposited HfO2/n-InAs/InGaAs metal--oxide--semiconductor capacitors with different postdeposition annealing (PDA) temperatures (400--550 °C) are investigated. Results show that the sample with the PDA temperature of 500 °C exhibits the best capacitance--voltage (C--V) behavior with small frequency dispersion and small hysteresis. The X-ray photoelectron spectroscopy (XPS) spectra show the reduction of the amount of As-related oxides to below the XPS detection level when the PDA temperature is up to 500 °C. As the PDA temperature was increased to above 500 °C, As and In atoms seem to diffuse significantly into HfO2, resulting in the degradation of C--V behavior.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021104-021104-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155183
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454284
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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