Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

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This study presents a broad investigation on Al implantation in crystalline Ge. We show that up to 600 °C, Al does not diffuse and a remarkable electrical activation of {\sim}1\times 10^{20} cm-3 is obtained. For higher annealing temperatures (from 700 to 800 °C), Al shows a significant diffusion towards the bulk and an unexpected uphill diffusion next to the surface, where the electrical measurements indicate a significant deactivation of Al. Both these latter observations are explained in terms of the presence of dopant traps, able to make immobile and electrically inactive the dopant next to the surface.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021301-021301-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155207
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454288
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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