Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon

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著者

    • Yu Xuegong Yu Xuegong
    • State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
    • Chen Lin Chen Lin
    • State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
    • Chen Peng [他] Chen Peng
    • State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
    • Yang Deren
    • State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

抄録

We have quantitatively investigated the evolution of oxygen (O) and vacancy (V) complexes in neutron-irradiated Czochralski silicon. It is found that the VO complexes can transfer into VO2 complexes via a metastable O--V--O intermediate. The activation energy for the VO complex annihilation is 1.89 eV, much larger than that 1.52 eV for the VO2 complex generation. This suggests that the VO annihilation is not only completed by transfering into VO2 complexes, but is dominated by dissociating into individual oxygen and vacancy.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021302-021302-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155224
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454291
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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