Charge Transport Anisotropy due to Interfacial Molecular Orientation in Polymeric Transistors with Controlled In-Plane Chain Orientation

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We report charge transport anisotropy of ultrathin-film transistors of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with controlled in-plane chain orientation prepared by a modified Langmuir--Blodgett method. The field-effect mobility of a five-monolayer transistor reached 3.0\times 10^{-4} cm2 V-1 s-1 with a large anisotropy ratio of about 7.5 between parallel and perpendicular chain orientations. This is in sharp contrast to a nearly two-dimensional mobility anisotropy of the previously reported ultrathin poly(3-hexylthiophene) transistors having a \pi-overlapped lamellar structure. The quasi-one-dimensional anisotropy of the present device is ascribed to a weak \pi--\pi stacking structure due to a flat-on-like orientation of MEH-PPV confirmed by atomic force microscopy.

収録刊行物

  • Applied physics express

    Applied physics express 5(2), 021602-021602-3, 2012-02-25

    The Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10030155262
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    023454298
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  NDL  JSAP 
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